Memory

MPN KSM29ED8/32HA CL(IDD) 21 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) Maximum Operating Power UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C

MPN KF436C17BBK2/16 Capacities Kits of 2: 16GB Frequencies 3600MHz Latencies CL17 Voltage 1.35V Operating Temperature 0 o C to 85 o C

MPN KF432C16RB1/16 CL(IDD) 17 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C

MPN KF432C16BBAK2/16 CL(IDD) 17 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) UL Rating 94 V - 0 Operating Temperature 0 o C to +70 o C Storage Temperature -40 o C to +85 o C

MPN KF432C16BBK2/8 CL(IDD) 16 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns(min.) Row Active Time (tRASmin) 29.25ns(min.) UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C

MPN KF426C16BB/8 CL(IDD) 16 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 260ns(min.) Row Active Time (tRASmin) 29.25ns(min.) UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C

MPN KSM32ES8/8HD CL(IDD) 22 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C Module Assembly DRAM: HYNIX (D-DIE)

MPN D4ES01-8G Detail DDR4 ECC Unbuffered SODIMM Applied Models: 21 series:DS1621xs+, DS1621+

MPN KVR32S22S8/16 CL(IDD) 22 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C

MPN KVR26S19S6/8 CL(IDD) 19 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C

MPN KVR32S22S6/8 CL(IDD) 22 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C

MPN KVR26N19S6/8 CL(IDD) 19 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C

MPN KSM26ES8/8HD CL(IDD) 19 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C Module Assembly DRAM: HYNIX (D-DIE)

MPN KVR26S19S8/16 CL(IDD) 19 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C

MPN KVR26N19S8/16 CL(IDD) 19 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C

MPN KSM32RS8/8HDR CL(IDD) 22 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) Maximum Operating Power IDD Specifications IDD Symbol 3200 Units IDD0 787 mA IDD0A 787 mA IDD1 893 mA IDD1A 919 mA IDD2N 714 mA IDD2NA 714 mA IDD2NT 759 mA IDD2NL 651 mA IDD2NG 714 mA IDD2ND 705 mA IDD2NP 714 mA IDD2P 478 mA IDD2Q 669 mA IDD3N 744 mA IDD3NA 744 mA IDD3P 512 mA IDD4R 1558 mA IDD4RA 1586 mA IDD4RB 1575 mA IDD4W 1544 mA IDD4WA 1592 mA IDD4WB 1487 mA IDD4WC 1537 mA IDD4WP 1752 mA IDD5B 2235 mA IDD5F2 1751 mA IDD5F4 1600 mA IDD6N 175 mA IDD6E 239 mA IDD6R 115 mA IDD6A 239 mA IDD7 1702 mA IDD8 92 mA IPP Symbol 3200 Units IPP0 36 mA IPP1 40 mA IPP2N 21 mA IPP2P 17 mA IPP3N 100 mA IPP3P 98 mA IPP4R 129 mA IPP4W 128 mA IPP5B 489 mA IPP5F2 324 mA IPP5F4 265 mA IPP6N 37 mA IPP6E 52 mA IPP6R 25 mA IPP6A 51 mA IPP7 142 mA IPP8 18 mA UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C Module Assembly DRAM: HYNIX (D-DIE) RCD: Rambus

MPN D4ES01-4G

MPN D4NESO-2666-4G 4GB DDR4-2666 non-ECC unbuffered SO-DIMM Applied Models: RS820RP+, RS820+, DS2419+, DS1819+, DS1618+, DVA3219

MPN MEM-DR416L-SL01-EU21 MANUFACTURER Samsung MEMORY CAPACITY 16 GB MEMORY TECHNOLOGY DDR4 MEMORY SPEED 2133 MHz VOLTAGE 1.2 V ECC ECC UDIMM RANK 2 rank CAS LATENCY CL15 MANUFACTURER PART NUMBER M391A2K43BB1-CPB PRODUCT ENVIRONMENTAL COMPLIANCE RoHS and REACH compliant, details available upon request

MPN CT32G4DFD832A Speed - DDR4-3200 ECC - NON-ECC CAS Latency - 22 DRAM Family - Crucial Density - 32GB Brand - Crucial Module Type - UDIMM Extended Timings - CL is equal to 22 Form Factor - UDIMM Technology - DDR4 Voltage - 1.2V PC Speed - PC4-25600 Kit Qty - 1 Specs DDR4 PC4-25600 CL is equal to 22 Dual Ranked x8 based Unbuffered NON-ECC DDR4-3200 1.2V DIMM Type - Unbuffered

MPN KVR32N22S8/8 CL(IDD) 22 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C

MPN KVR32N22S6/4 CL(IDD) 22 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C

MPN KVR26N19S6/4 CL(IDD) 19 cycles Row Cycle Time (tRCmin) 45.75ns(min.) Refresh to Active/Refresh Command Time (tRFCmin) 350ns(min.) Row Active Time (tRASmin) 32ns(min.) Maximum Operating Power TBD W UL Rating 94 V - 0 Operating Temperature 0 o C to +85 o C Storage Temperature -55 o C to +100 o C

MPN KVR26S19S6/4 Memory Capacity 4GB Model/Series/Type ValueRAM Brand Kingston CASLatency CL19 Chip Organization x8 Country of Origin China, Taiwan Form Factor DDR4 Memory Depth 1G Memory Voltage 1.2v Module Type SODIMM Operating Temperature 0 o C to 85 o C Product Type/Family DRAM RAM Memory Type Non-ECC Rank 1R (Single Rank) Speed 2666MHz (PC4-21300) Item Dimension (L inchxW inchxH inch) 3 x 7 x 1 Weight 1.00lb